Review of Atom Probe Tomography Applications for Semiconductor materials

Practical Issues for Atom Probe Tomography Analysis of III-Nitride Semiconductor Materials.

Various practical issues affecting atom probe tomography (APT) analysis of III-nitride semiconductors have been studied as part of an investigation using a c-plane InAlN/GaN heterostructure. Specimen preparation was undertaken using a focused ion beam microscope with a mono-isotopic Ga source. This enabled the unambiguous observation of implantation damage induced by sample preparation. In the ...

Organic Materials and Organic/Inorganic Heterostructures in Atom Probe Tomography

Ultrafast Laser Assisted Field Evaporation and Atom Probe Tomography Applications

Considering the recent developments of the pulsed laser in the femtosecond domain, the possibility of conceiving a new laser assisted Tomographic Atom Probe has been nvisaged. The instrument is able to map out the 3D distributions of the atomic positions in a The interest of the terial sciences has already been demonstrated many times [3,4]. However, since HV mples have to be electrically good ...

Atom probe tomography in nanoelectronics

The role of laser assisted atom probe tomography (APT) in microelectronics is discussed on the basis of various illustrations related to SiGe epitaxial layers, bipolar transistors or MOS nano-devices including gate all around (GAA) devices that were carried out at the Groupe de Physique des Matériaux of Rouen (France). 3D maps as provided by APT reveal the atomic-scale distribution of dopants a...

Dynamic reconstruction for atom probe tomography.

Progress in the reconstruction for atom probe tomography has been limited since the first implementation of the protocol proposed by Bas et al. in 1995. This approach and those subsequently developed assume that the geometric parameters used to build the three-dimensional atom map are constant over the course of an analysis. Here, we test this assumption within the analyses of low-alloyed mater...